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Product Detailed Parameters
- Description：IGBT 1200V 120A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：120 A
- Current - Collector Pulsed (Icm)：240 A
- Vce(on) (Max) @ Vge, Ic：1.95V @ 15V, 60A
- Power - Max：517 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：311 nC
- Td (on/off) @ 25°C：52ns/296ns
- Test Condition：600V, 60A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3 Variant
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The onsemi FGY60T120SQDN is an Ultra Field Stop IGBT featuring a trench construction with a co-packaged free-wheeling diode. It operates at a collector-emitter voltage of 1200 V and supports a continuous collector current of 60 A at TC = 100°C, rising to 120 A at TC = 25°C. The device exhibits a typical saturation voltage of 1.7 V at IC = 60 A and VGE = 15 V. Switching characteristics include a turn-on loss of 5.15 mJ and a turn-off loss of 1.82 mJ under standard test conditions. The integrated diode provides a forward voltage of 3.4 V at IF = 60 A. Thermal resistance from junction to case is 0.29 °C/W for the IGBT and 0.42 °C/W for the diode.
Feature Summary
- Ultra Field Stop Trench technology delivers low on-state voltage and minimal switching loss.
- Integrated soft and fast co-packaged free-wheeling diode with low forward voltage.
- Maximum junction temperature rating of 175°C for high-temperature operation.
- 100% of parts tested for ILM (Inductive Load Switching) capability.
Applications
- Solar Inverters
- Uninterruptible Power Supplies (UPS)
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package type and compliance status. Confirm that the TO-247-3LD package dimensions match the design constraints. Validate RoHS compliance requirements prior to final procurement decisions.
Selection Notes
Select this component when designing systems requiring high-voltage handling up to 1200 V combined with efficient switching performance. Ensure the thermal management solution can handle the specified power dissipation limits at the intended operating temperatures. Verify gate drive voltage compatibility with the 15 V threshold specifications.
Part Context
This device belongs to the Ultra Field Stop (UFS) family of Insulated Gate Bipolar Transistors manufactured by onsemi. It utilizes advanced trench gate technology to optimize the trade-off between conduction losses and switching speeds. The inclusion of a monolithic anti-parallel diode simplifies circuit topology for hard-switching applications.
Replacement Considerations
Direct replacements must maintain the 1200 V / 60 A rating and TO-247-3LD package. Evaluate alternative UFS IGBTs with similar saturation voltages and switching energy values to ensure equivalent thermal and electrical performance in existing designs.
FAQ
What is the maximum pulsed collector current for the FGY60T120SQDN?
The maximum pulsed collector current (ILM/ICM) is rated at 240 A at TC = 25°C under inductive load conditions.
Does the device include an integrated diode?
Yes, the FGY60T120SQDN incorporates a soft and fast co-packaged free-wheeling diode with a typical forward voltage of 3.4 V at 60 A.
What is the thermal resistance from junction to case?
The maximum thermal resistance from junction to case is 0.29 °C/W for the IGBT and 0.42 °C/W for the integrated diode.
