Single Bipolar Transistors FJV992PMTF product image

FJV992PMTF

$0.19
  • Description:TRANS PNP 120V 0.05A SOT-23-3
  • Series:-

SKU:fba57b2f3dd2 Category: Brand:

  
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FJV992PMTF is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS PNP 120V 0.05A SOT-23-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for FJV992PMTF

  • Description:TRANS PNP 120V 0.05A SOT-23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT),Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):50 mA
  • Voltage - Collector Emitter Breakdown (Max):120 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 1mA, 6V
  • Power - Max:300 mW
  • Frequency - Transition:50MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3

Single Bipolar Transistors datasheet and documents for FJV992PMTF

FJV992PMTF

Single Bipolar Transistors Overview

The FJV992PMTF is a PNP epitaxial silicon transistor manufactured by onsemi, housed in an SOT-23 surface-mount package. It serves as the complementary device to the FJV1845 NPN transistor. The component features a collector-base voltage and collector-emitter voltage rating of -120 V, with a maximum continuous collector current of -50 mA. Key electrical characteristics include a DC current gain (hFE) ranging from 150 to 800 depending on classification, a collector-emitter saturation voltage of -300 mV at specified currents, and a current gain bandwidth product of 50 MHz.

Single Bipolar Transistors Feature Summary

  • Designed for audio frequency low noise amplifier applications
  • Functions as the complementary pair to the FJV1845 NPN transistor
  • Utilizes a compact SOT-23 surface-mount package

Single Bipolar Transistors Applications

  • Audio frequency low noise amplifiers
  • Complementary circuits paired with FJV1845

Single Bipolar Transistors Procurement Notes

Verify the specific hFE binning classification required for your design, as the datasheet defines distinct ranges for hFE1 and hFE2. Confirm that the SOT-23 pinout matches your schematic, specifically identifying Base, Emitter, and Collector positions. Ensure the -120 V voltage ratings align with your circuit's maximum operating conditions.

Single Bipolar Transistors Selection Notes

Select this component when designing audio frequency stages requiring low noise performance and high voltage tolerance. Consider the available hFE classifications to ensure consistent gain matching if used in differential pairs or complementary configurations. Verify thermal management requirements against the 300 mW power dissipation limit at ambient temperatures.

Single Bipolar Transistors Part Context

This part belongs to the FJV992 series of PNP epitaxial silicon transistors originally developed by Fairchild Semiconductor and now managed by onsemi following corporate integration. The device is engineered specifically for audio applications, offering low noise characteristics suitable for sensitive signal amplification tasks.

Single Bipolar Transistors Replacement Considerations

The FJV992PMTF is functionally designed as a complement to the FJV1845. When sourcing replacements, verify that any alternative device maintains the same SOT-23 footprint and provides comparable low-noise audio specifications and -120 V breakdown ratings.

FJV992PMTFFJV992PMTF
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