FL06100G

Single FETs, MOSFETs Overview

The FL06100G is a Silicon Carbide (SiC) MOSFET from the Falcon Series by fastSiC, housed in a PDFN 8 x 8 surface-mount package. It features a drain-source voltage of 650V and a maximum on-state resistance of 120 mΩ at 10A and 100°C. The device supports a continuous drain current of 22A and a pulse drain current of 52A, with a total power dissipation of 83W. Key electrical parameters include a gate charge of 51 nC and an avalanche energy rating of 290 mJ. Operating temperatures range from -55°C to 175°C.

Single FETs, MOSFETs Feature Summary

• Optimized RDS(on) combined with rapid switching behavior for high efficiency.
• Low profile packaging designed to minimize parasitic inductance.
• Clean Kelvin-source switching configuration compatible with standard gate drivers.
• High avalanche endurance capability suitable for demanding power applications.

Single FETs, MOSFETs Applications

• Switching mode power supplies
• Power factor correction and DC/DC converters
• Electric vehicle charging stations
• Motor driver circuits
• Renewable energy systems and power inverters

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'G' corresponds to the PDFN 8 x 8 package variant when ordering, as the FL06100 series also includes a TOLL package option. Confirm RoHS compliance and halogen-free status requirements against your manufacturing standards. Ensure thermal management solutions align with the specified junction-to-case thermal impedance for reliable operation within the rated temperature range.

Single FETs, MOSFETs Selection Notes

Select this component for designs requiring high power density and compact form factors due to its low-profile PDFN 8 x 8 package. The clean Kelvin source pin facilitates accurate gate drive control, reducing switching losses. Consider the 650V rating and 120 mΩ maximum resistance for balancing conduction and switching losses in medium-power SiC applications.

Single FETs, MOSFETs Part Context

The FL06100G belongs to the Falcon Series of Silicon Carbide MOSFETs manufactured by fastSiC Semiconductor Inc. This series is engineered to enable high-frequency operation and high-temperature applications while realizing compact and lightweight system designs. The product line emphasizes high reliability and optimized performance for modern power electronics.

Single FETs, MOSFETs Replacement Considerations

Consult the manufacturer's documentation for comparable products or contact sales representatives directly for alternative device recommendations. No specific substitute part numbers are confirmed in the provided datasheet.

Single FETs, MOSFETs FAQ

What is the difference between the FL06100F and FL06100G variants?

The primary difference lies in the packaging. The FL06100F utilizes a TOLL package, whereas the FL06100G uses a PDFN 8 x 8 surface-mount package. Both share the same core electrical characteristics.

Does the FL06100G support negative gate voltages?

Yes, the recommended gate-source turn-on voltage range is 12V to 15V, and switching characteristics specify a negative gate voltage of -3V during off-states.