FM1808B-PG

Memory IC Overview

The FM1808B-PG is a 256-kilobit ferroelectric nonvolatile RAM organized as 32,768 x 8 bits. It utilizes an advanced ferroelectric process to provide high endurance of one trillion read/write cycles and data retention for 38 years at +75°C. The device features NoDelay writes, eliminating write cycle delays. It operates with a 70 ns access time and 130 ns cycle time. Active current is 15 mA, while standby current is typically 25 µA. It supports industrial temperature ranges from -40°C to +85°C.

Memory IC Feature Summary

• Ferroelectric nonvolatile memory architecture providing true surface mount reliability without battery concerns
• High endurance capability supporting one trillion read/write cycles
• NoDelay write operation compatible with standard SRAM and EEPROM pinouts
• Resistant to negative voltage undershoots and superior performance under moisture, shock, and vibration

Memory IC Applications

• Automated external defibrillators requiring reliable data storage
• Industrial control systems needing high endurance logging
• Embedded solutions requiring fast write timing and low power consumption

Memory IC Procurement Notes

Verify the specific suffix PG indicates the 28-pin SOIC package configuration. Confirm the manufacturer is Ramtron International Corporation or its successor entity. Ensure the component meets RoHS standards if required by your assembly process. Cross-reference the datasheet revision to confirm electrical characteristics match your design requirements.

Memory IC Selection Notes

Select this component when system design requires nonvolatile memory with SRAM-like speed and EEPROM compatibility. It serves as a superior alternative to battery-backed SRAM modules by eliminating battery replacement issues. Consider this part for applications demanding high write endurance and resistance to environmental stressors like vibration and shock.

Memory IC Part Context

This component belongs to the FM1808 family of 256Kbit F-RAM memories. It shares architectural similarities with other byte-wide ferroelectric RAM devices but is distinct in its specific package and electrical parameter set. The technology leverages ferroelectric materials to achieve nonvolatility without the complexity of charge-pump circuits found in flash memory.

Memory IC Replacement Considerations

The FM1808B-SG is a similar variant within the same product family offering comparable functionality.