FMAM4072

Overview

The FMAM4072 is a GaN power amplifier from Fairview Microwave, operating from 20 MHz to 1 GHz. It provides 40 dB gain with a P1dB of 4 Watts (36 dBm). Key electrical parameters include a 44 dBm IP3, 32% PAE, and 6 dB noise figure. The device requires an operating supply voltage of 18 V to 28 V and features SMA connectors.

Feature Summary

• Utilizes Gallium Nitride (GaN) technology for high-power performance
• Includes integrated heatsink for thermal management
• Designed for general-purpose RF amplification applications

Applications

• General purpose RF amplification
• Test and measurement equipment
• Communication systems requiring broadband power amplification

Procurement Notes

Verify the specific datasheet version for exact pinout configurations and absolute maximum ratings before integration. Confirm that the required DC supply voltage range of 18 V to 28 V aligns with your system design. Ensure proper thermal handling solutions are implemented due to the integrated heatsink requirement.

Selection Notes

Select this component when a wide bandwidth from 20 MHz to 1 GHz is required alongside high output power capabilities. The GaN construction offers robustness and efficiency suitable for demanding RF environments. Consider the SMA interface compatibility and the necessity for external biasing within the specified voltage range.

Part Context

Fairview Microwave produces specialized RF components for testing and industrial use. The FMAM4072 belongs to their line of broadband power amplifiers, leveraging GaN technology to deliver significant gain and output power across a broad frequency spectrum while maintaining linearity metrics like IP3.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.