FMAM5032

Overview

The FMAM5032 is a high-power GaN RF amplifier module manufactured by Fairview Microwave. It operates within a frequency range of 500 MHz to 3 GHz and provides a gain of 48 dB. The device delivers a saturated output power (Psat) of 50 Watts and features an input third-order intercept point (IP3) of 52 dBm. It utilizes SMA connectors for both input and output interfaces and requires an operating supply voltage between 28 V and 42 V.

Feature Summary

• Utilizes Gallium Nitride (GaN) technology for high-power performance
• Provides 48 dB gain across the 500 MHz to 3 GHz band
• Features SMA input and output connectors

Applications

• High-power RF signal amplification
• Test and measurement equipment
• Military and aerospace systems

Procurement Notes

Verify component authenticity through authorized Fairview Microwave channels or certified distributors. Confirm that the specific revision matches engineering requirements, as specifications are subject to change without notice. Ensure proper thermal management solutions are integrated, given the high power dissipation characteristics of the GaN technology and 50 Watt output capability.

Selection Notes

Select this module when high output power and wideband operation are required in the sub-3 GHz spectrum. The GaN construction supports higher power density compared to traditional technologies. Verify that the system can accommodate the 28 V to 42 V supply range and that the SMA interface aligns with existing interconnect infrastructure.

Part Context

This component belongs to the Fairview Microwave line of RF amplifier modules. These modules integrate active semiconductor devices into shielded enclosures to provide standardized gain and power performance. The FMAM5032 specifically targets applications requiring significant power amplification in a modular form factor suitable for integration into larger RF systems.

Replacement Considerations

No public confirmed substitute part numbers are available.