— IC芯片 | 连接器 | 传感器 | 被动器件 —
Product Detailed Parameters
- Description:POWER AMP 500MHZ-2.7GHZ P1DB SMA
- Series:-
- Mfr:Fairview Microwave
- Package:Bag
- Frequency:500MHz ~ 2.7GHz
- P1dB:-
- Gain:47dB
- Noise Figure:-
- RF Type:General Purpose
- Voltage - Supply:24V ~ 32V
- Current - Supply:6A
- Test Frequency:-
- Mounting Type:Chassis Mount
- Package / Case:Module, SMA Connectors
- Supplier Device Package:-
- Grade:-
- Qualification:-
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Overview
The FMAM5113 is a high-power GaN RF amplifier module manufactured by Fairview Microwave. It operates within a frequency range of 500 MHz to 2.7 GHz and delivers a gain of 47 dB. The device achieves a saturated output power (Psat) of 50 Watts. Electrical requirements include an operating supply voltage between 24 V and 32 V, with a typical operating current of 6 A. The unit features SMA input and output connectors and is designed for robust performance in demanding RF applications.
Feature Summary
- Utilizes Gallium Nitride (GaN) technology for high power density and efficiency
- Provides 47 dB gain across a broad 500 MHz to 2.7 GHz bandwidth
- Delivers 50 Watt saturated output power capability
- Incorporates SMA connectors for standard RF interfacing
Applications
- Wireless infrastructure base stations
- Test and measurement instrumentation
- Electronic warfare systems
Procurement Notes
Verify the specific datasheet version and electrical test conditions prior to ordering. Confirm that the required supply voltage and current capabilities align with system power designs. Ensure SMA connector compatibility with existing cable assemblies. Check for any regional distribution restrictions or availability limitations from authorized suppliers before finalizing procurement plans.
Selection Notes
Select this component when high output power and wideband gain are critical requirements. Consider the thermal management needs associated with 50 Watt dissipation. Evaluate the 24-32 V supply requirement against available system power rails. Compare the GaN technology benefits against alternative semiconductor options for efficiency and linearity needs.
Part Context
This part belongs to Fairview Microwave's portfolio of high-performance RF amplifiers. It represents a solution for applications requiring significant signal amplification over a multi-octave bandwidth. The use of GaN technology positions it for modern wireless communication systems that demand high power efficiency and thermal stability.
Replacement Considerations
No public confirmed substitute part numbers are available in the provided documentation.
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