FMAM5115

Overview

The FMAM5115 is a high-power GaN RF amplifier manufactured by Fairview Microwave. It operates within a frequency range of 700 MHz to 2.7 GHz and provides a gain of 47 dB. The device delivers a saturated output power (Psat) of 50 Watts. Electrical requirements include an operating voltage between 24 V and 32 V, with a current consumption of 6 A. The unit features SMA connectors for input and output interfaces.

Feature Summary

• Utilizes Gallium Nitride (GaN) technology for high-power performance
• Provides 47 dB gain across the 700 MHz to 2.7 GHz band
• Includes integrated heatsink for thermal management

Applications

• High-power RF signal generation
• Test and measurement instrumentation
• Broadband communication systems

Procurement Notes

Verify component authenticity through authorized Fairview Microwave channels or certified distributors. Confirm that the specific unit matches the FMAM5115 designation and includes the required SMA interface. Ensure compatibility with the specified 24 V to 32 V power supply and adequate thermal dissipation infrastructure before integration.

Selection Notes

Select this model when high output power at 50 Watts is required alongside significant gain in the sub-3 GHz spectrum. Consider the 6 A current draw and 24–32 V supply constraints during system design. Verify that SMA connectors align with existing interconnect standards and that the physical dimensions accommodate the integrated heatsink.

Part Context

This component belongs to the Fairview Microwave RF Amplifier product line, specifically designed for wireless and RF integrated circuit applications. It represents a high-power solution utilizing GaN semiconductor technology, distinct from low-noise or LDMOS-based variants within the manufacturer's catalog.

Replacement Considerations

FMAMG5069F is a compatible heatsink accessory for this amplifier model.