FMAM5116

Overview

The FMAM5116 is a high-power GaN RF amplifier manufactured by Fairview Microwave. It operates within a frequency range of 700 MHz to 2.7 GHz and delivers a nominal gain of 50 dB. The device achieves a saturated output power (Psat) of 100 Watts. It utilizes SMA connectors for signal input and output interfaces.

Feature Summary

• Utilizes Gallium Nitride (GaN) technology for high power density
• Provides 50 dB nominal gain across the operational bandwidth
• Achieves 100 Watt saturated output power capability

Applications

• High power RF signal amplification
• Test and measurement equipment
• Wireless communication systems

Procurement Notes

Verify component authenticity through authorized Fairview Microwave channels or certified distributors. Confirm that the SMA connector interfaces match system requirements. Ensure thermal management solutions are adequate for 100 Watt operation. Review the official datasheet for detailed electrical specifications and absolute maximum ratings before integration.

Selection Notes

Select this model when high output power and wideband coverage are required. The GaN construction supports robust performance in demanding environments. Compare against lower power alternatives if wattage requirements exceed 100 Watts. Verify SMA compatibility with existing cabling infrastructure.

Part Context

This component belongs to the Fairview Microwave RF amplifier product line. It is categorized under wireless and RF integrated circuits. The manufacturer specializes in microwave and RF components for various industrial applications.

Replacement Considerations

No public substitute part numbers are documented. Evaluate models with similar GaN technology, 50 dB gain, and 100 Watt Psat ratings from other manufacturers if availability is an issue.