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The FMB2222A is an NPN multi-chip general-purpose amplifier manufactured by onsemi. It integrates four discrete transistors within a single SuperSOT-6 package to provide high current handling and low saturation voltage. The device supports continuous collector currents up to 500 mA with a collector-emitter breakdown voltage of 45 V and a collector-base voltage of 75 V. Total power dissipation reaches 700 mW, while the transition frequency is rated at 300 MHz. Designed for medium-power amplification and switching applications, it operates across a junction temperature range from -55°C to +150°C.
Verify the specific ordering suffix against official manufacturer documentation before procurement. Confirm that the component meets all applicable RoHS directives and environmental compliance standards required for the target assembly process. Ensure the selected packaging format aligns with automated placement equipment specifications.
Select this component when circuit designs require multiple matched NPN transistors in a minimal footprint. Evaluate thermal resistance characteristics to ensure adequate heat dissipation under maximum load conditions. Compare total power dissipation limits against ambient operating temperatures to maintain safe junction temperatures during continuous operation.
This part belongs to the FFB/FMB/MMPQ2222A family of multi-chip amplifiers. It serves as a consolidated alternative to using four separate discrete transistors, reducing board space and simplifying layout. The device maintains electrical consistency across the integrated die pairs for balanced performance.
FFB2222A (SC70-6 package)
The device contains four independent NPN transistors integrated into a single SuperSOT-6 package.
The absolute maximum continuous collector current is rated at 500 mA.
The SuperSOT-6 package provides a thermal resistance of 180°C/W junction-to-ambient, supporting up to 700 mW of total power dissipation.