FMG1G100US60H

Overview

The FMG1G100US60H is a molding type Insulated Gate Bipolar Transistor (IGBT) power module manufactured by Fairchild Semiconductor. It features a maximum collector-emitter voltage of 600V and a continuous collector current of 100A. The device incorporates low conduction and switching losses alongside short circuit ruggedness, designed for efficient power conversion applications.

Feature Summary

• Low conduction and switching losses for improved efficiency
• High short circuit ruggedness for robust operation
• Molding type module construction

Applications

• Industrial motor drives
• Power inversion systems
• General purpose power conversion

Procurement Notes

Verify component authenticity through authorized channels due to potential obsolescence. Confirm datasheet revisions match design requirements. Check for RoHS compliance status as older Fairchild modules may not meet current environmental standards. Validate thermal management solutions against the specific package dissipation capabilities.

Selection Notes

Select this module for applications requiring high current handling at 600V levels. Ensure gate drive circuits support the IGBT switching characteristics. Evaluate thermal resistance parameters for heatsink sizing. Consider the molding type packaging for mechanical protection in industrial environments compared to other mounting styles.

Part Context

This part belongs to Fairchild's IGBT power module lineup, which emphasizes low loss performance. It is distinct from discrete MOSFETs like the FCPF36N60NT or smaller modules like the FMM6G30US60. The 'FMG' prefix typically denotes molding type modules within the manufacturer's portfolio structure.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. As the product may be obsolete, consult official replacement guides or contact the manufacturer directly for valid cross-reference data.