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The FMG2G200US60 is a molding type IGBT power module manufactured by onsemi (formerly Fairchild Semiconductor). It features a half-bridge configuration with an integrated anti-parallel fast and soft FWD. The device supports a collector-emitter voltage of 600 V and a continuous collector current of 200 A at TC = 80°C. It offers a short circuit withstand time of 10 µs at TC = 100°C and VGE = 15V. The saturation voltage is 2.1 V typ at IC = 200A, with a maximum power dissipation of 695 W at TC = 25°C. The module utilizes the 7PM-HA package and operates within a junction temperature range of -40 to +150°C.
Verify the specific revision status and manufacturing origin before procurement, as the datasheet indicates historical production by Fairchild Semiconductor prior to its acquisition by onsemi. Confirm that the 7PM-HA package dimensions and mounting torque requirements align with the target application's mechanical design constraints. Ensure compliance with any updated environmental regulations or RoHS directives applicable to legacy components in current supply chains.
Select this module for applications requiring high short-circuit ruggedness and fast switching speeds. Evaluate the thermal resistance values (RθJC) against the expected heat sink capabilities to ensure the junction temperature remains within the -40 to +150°C operating range. Consider the gate charge parameters when designing the driver circuitry to optimize switching losses and minimize electromagnetic interference in motor control or inverter systems.
This component belongs to the FMG2 series of IGBT power modules designed for general purpose inverters and motor drives. It represents a legacy product line originally developed by Fairchild Semiconductor, which was later acquired by onsemi. The module integrates both N-channel IGBTs and anti-parallel diodes into a single molded package, providing a compact solution for medium-power electronic conversion tasks.
Public confirmed substitute part numbers are not available in the provided documentation.