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The FMY1AT148 is a complementary digital transistor array manufactured by ROHM Semiconductor, housed in an SMT5 surface-mount package. It integrates one NPN and one PNP bipolar junction transistor configured as a common emitter pair. The device supports a maximum collector-emitter voltage of 50V and a continuous collector current of 150mA. Key electrical parameters include a minimum DC current gain (hFE) of 68 at 5mA/5V, a saturation voltage of 300mV at 250µA base current, and a transition frequency of 180MHz for the NPN element. Power dissipation is rated at 300mW, with an operating temperature range from -55°C to +150°C.
Verify the specific suffix and revision code on the datasheet to ensure compatibility with your design requirements. Confirm that the SMT5 package dimensions align with your PCB footprint constraints. Check for any recent lifecycle status updates from ROHM Semiconductor regarding availability or recommended alternatives before finalizing procurement plans.
Select this component when a matched NPN/PNP pair is required for push-pull or complementary switching configurations. Ensure the 50V voltage rating and 150mA current capacity meet the load requirements. Consider the thermal performance and power dissipation limits if operating near maximum ratings. Verify that the integrated bias resistors match the drive source impedance and logic levels of the controlling circuit.
This part belongs to the FMY series of complementary digital transistors from ROHM Semiconductor. It is designed as a space-saving alternative to discrete NPN and PNP transistors with external biasing networks. The SMT5 package offers a small form factor suitable for dense PCB layouts in modern electronic equipment.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult ROHM Semiconductor official resources for direct replacements or pin-compatible alternatives.