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FOD8383R2V is listed in the Isolators - Gate Drivers range at ChipApex. The manufacturer field lists onsemi. Its product description is OPTOISO 5KV 1CH GATE DVR 5SOP. Review the specifications below when checking this part for your BOM.
The FOD8383R2V is a high-speed MOSFET output optocoupler designed for IGBT and MOSFET gate drive applications. It features a push-pull output stage capable of delivering 2.5 A continuous current and 3 A peak current. The device utilizes an Optoplanar wide-body SOP-5 package to provide 5000 Vrms isolation voltage. Key electrical characteristics include a typical rise time of 35 ns and fall time of 25 ns, with a maximum propagation delay of 210 ns. It operates within a temperature range of -40°C to +100°C and supports output supply voltages from 15 V to 30 V.
Verify the specific suffix 'R2V' corresponds to the tape-and-reel packaging format required for automated assembly processes. Confirm that the Optoplanar wide-body SOP-5 footprint matches the target PCB layout dimensions. Ensure the selected component meets the necessary insulation coordination standards for the intended application voltage class. Cross-reference the manufacturer's latest datasheet revision to confirm pinout compatibility and updated thermal specifications before finalizing procurement orders.
Select this component when high-speed switching with strong noise immunity is required for isolated gate drivers. The integrated Miller clamp simplifies circuit design by reducing external snubber requirements. Choose this part over standard optocouplers if higher common-mode transient immunity is critical. Consider the 5-pin SOP package constraints regarding board space and thermal dissipation capabilities relative to the expected duty cycle and ambient temperature conditions.
This device belongs to the FOD8383 series of high-speed gate drive optocouplers from onsemi. It is engineered to replace discrete driver solutions by integrating the LED, photodetector, and output transistors into a single isolated package. The series is characterized by its ability to handle rapid switching transitions while maintaining signal integrity across the isolation barrier, making it suitable for modern power electronics architectures.
Direct replacements may include the FOD8383V or FOD8383R2, provided the packaging variant aligns with manufacturing requirements. Verify that any substitute maintains the same 5000 Vrms isolation rating and 35 kV/µs CMTI specification. Ensure the replacement part offers equivalent peak output current capabilities to avoid derating issues in the final application.
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