SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FP200R12N3T7_B11 is an EconoPIM™3 module integrating TRENCHSTOP™ IGBT7 and Emitter Controlled 7 diodes. It features a 1200 V collector-emitter voltage (VCES) and a nominal continuous DC collector current of 200 A at 25 °C, with a repetitive peak current of 400 A. The inverter IGBT exhibits a typical saturation voltage of 1.55 V at 25 °C. The integrated rectifier diode supports a maximum RMS forward current of 150 A at TC = 110 °C. An NTC thermistor provides thermal monitoring with a rated resistance of 5 kΩ at 25 °C. The module utilizes PressFIT contact technology and operates within a junction temperature range of -40 °C to 175 °C.
Verify the specific B11 suffix indicates the inclusion of PressFIT pins rather than standard solder terminals. Confirm that the component meets industrial qualification standards per IEC 60747, 60749, and 60068 before integration. Ensure the design accommodates the specific mounting torque requirements and thermal interface material specifications outlined in the application notes.
Select this module for applications requiring high current handling up to 200 A and robust short-circuit withstand capability. Consider the thermal resistance values when designing heatsinking solutions. Verify that the gate drive circuitry can accommodate the specified internal gate resistances and charge requirements for optimal switching performance.
This component belongs to Infineon's EconoPIM™3 series, designed for three-phase input rectifier and inverter topologies. It represents the seventh generation of TRENCHSTOP™ technology, offering improved efficiency and power cycling capability compared to previous iterations. The package dimensions are standardized for compatibility with existing system layouts.
Direct replacements include other EconoPIM™3 modules with similar current ratings, such as the FP100R12N3T7 or FP200R12W3T7 variants, provided the pinout and electrical characteristics match the specific application requirements.