FP25R12W2T4PB11BPSA1

Overview

The FP25R12W2T4P_B11 is an EasyPIM module integrating Trench/Fieldstop IGBT4 and Emitter Controlled 4 diodes with PressFIT technology. It features a collector-emitter voltage of 1200 V, a nominal continuous DC collector current of 25 A at TH = 90°C, and a repetitive peak collector current of 50 A. The collector-emitter saturation voltage ranges from 1.85 V to 2.25 V depending on temperature. Thermal resistance from junction to heatsink is 1.19 K/W per IGBT and 1.58 K/W per diode. The module includes a pre-applied thermal interface material and an integrated NTC thermistor rated at 5.00 kΩ.

Feature Summary

• Integrates Trench/Fieldstop IGBT4 and Emitter Controlled 4 diodes for low switching losses and low VCEsat.
• Utilizes PressFIT contact technology for robust mounting without screws.
• Features an Al2O3 substrate with low thermal resistance and pre-applied thermal interface material.
• Includes integrated mounting clamps and an internal NTC thermistor for thermal monitoring.

Applications

• Auxiliary inverters
• Air conditioning systems
• Motor drives

Procurement Notes

Verify the exact ordering suffix against official Infineon documentation to confirm specific mechanical or electrical variants. Ensure compatibility with PressFIT assembly tools and verify that the pre-applied thermal interface material meets storage and handling requirements specified in application notes before integration into the final design.

Selection Notes

Select this component when a compact three-phase inverter solution with integrated rectifier and brake chopper is required. Consider the 1200 V rating and 25 A continuous current capability relative to the system's thermal management constraints. Verify that the operating junction temperature range of -40°C to 150°C aligns with the environmental conditions of the target application.

Part Context

This part belongs to the EasyPIM family from Infineon Technologies, which combines power semiconductors with gate drivers in a single package. The FP25R12W2T4P_B11 specifically utilizes Trench/Fieldstop IGBT4 technology, offering improved switching performance compared to earlier generations while maintaining high reliability through its robust packaging and integrated protection features.

Replacement Considerations

Consult official Infineon cross-reference lists for verified substitutes. Ensure any replacement matches the 1200 V rating, 25 A current capacity, and PressFIT mounting style. Verify pinout compatibility and thermal resistance specifications to maintain system performance and safety margins.