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FQA34N20 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 200V 34A TO3P. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for FQA34N20
- Description：MOSFET N-CH 200V 34A TO3P
- Series：QFET®
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：200 V
- Current - Continuous Drain (Id) @ 25°C：34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：75mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id：5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：78 nC @ 10 V
- Vgs (Max)：±30V
- Input Capacitance (Ciss) (Max) @ Vds：3100 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：210W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-3P
- Package / Case：TO-3P-3, SC-65-3
Single FETs, MOSFETs datasheet and documents for FQA34N20
Single FETs, MOSFETs Overview
The FQA34N20 is a high-voltage N-channel Power MOSFET manufactured by onsemi. It utilizes the QFET technology, which is designed to provide superior switching performance and ruggedness compared to standard planar structures. The device features an N-channel configuration suitable for various power switching applications requiring high voltage tolerance and efficient current handling capabilities within a robust package.
Single FETs, MOSFETs Feature Summary
- Utilizes QFET technology for enhanced switching speed and reduced switching losses
- Designed with low thermal resistance for effective heat dissipation in high-power environments
- Features high voltage blocking capability suitable for demanding power electronics applications
Single FETs, MOSFETs Applications
- High-frequency power supplies
- DC-DC converters
- Motor control circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific datasheet revision and ordering suffix when sourcing. Confirm that the component matches the exact electrical specifications required for the target application, particularly regarding voltage ratings and thermal characteristics. Ensure compliance with relevant environmental standards such as RoHS if applicable to the project requirements.
Single FETs, MOSFETs Selection Notes
Select this component for designs requiring high-voltage N-channel switching with improved efficiency over standard planar MOSFETs. Consider the thermal management requirements of the TO-3P package and ensure the gate drive circuitry is compatible with the device's input capacitance and charge requirements for optimal performance.
Single FETs, MOSFETs Part Context
This part belongs to onsemi's QFET family, which integrates trench gate technology with planar cell architecture. This combination aims to deliver lower on-resistance and faster switching times than traditional planar devices, making it suitable for applications where efficiency and size are critical constraints in power conversion systems.
Single FETs, MOSFETs Replacement Considerations
Direct substitutes may include other QFET series parts from onsemi with similar voltage and current ratings. Verify pinout compatibility and thermal performance before substitution.
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