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FQP33N10 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 100V 33A TO220-3. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for FQP33N10
- Description：MOSFET N-CH 100V 33A TO220-3
- Series：QFET®
- Mfr：onsemi
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：52mOhm @ 16.5A, 10V
- Vgs(th) (Max) @ Id：4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：51 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：1500 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：127W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Supplier Device Package：TO-220-3
- Package / Case：TO-220-3
Single FETs, MOSFETs datasheet and documents for FQP33N10
Single FETs, MOSFETs Overview
The FQP33N10 is an N-channel enhancement mode power MOSFET manufactured using onsemi’s proprietary Planar Strip and DMOS technology. It features a drain-source voltage (Vds) of 100 V, a continuous drain current (Id) of 33 A at case temperature, and a maximum on-resistance (Rds(on)) of 0.052 Ω. The device exhibits a threshold voltage of 4 V, an input capacitance (Ciss) of 1150 pF at 25 V, and a rise time of 195 ns. With a power dissipation rating of 127 W, it is designed for high avalanche energy strength and efficient switching performance in TO-220 packages.
Single FETs, MOSFETs Feature Summary
- Utilizes Planar Strip and DMOS technology to minimize on-resistance
- Provides high avalanche energy strength for robust operation
- Delivers excellent switching performance characteristics
Single FETs, MOSFETs Applications
- DC-DC converters
- Power switching applications
- Motor control circuits
Single FETs, MOSFETs Procurement Notes
Verify the specific package variant and marking code against the official datasheet before procurement. Ensure thermal management solutions align with the 127 W dissipation rating under intended operating conditions. Confirm that gate drive voltages remain within the specified threshold limits to prevent unintended conduction or damage during system integration.
Single FETs, MOSFETs Selection Notes
Select this component when a 100 V N-channel MOSFET with low on-resistance is required for medium-power switching. The 33 A current rating suits applications demanding moderate load handling. Consider the TO-220 package for through-hole mounting where adequate heatsinking can be implemented to maintain junction temperatures within safe operating limits during continuous duty cycles.
Single FETs, MOSFETs Part Context
This part belongs to onsemi’s QFET series of single N-channel MOSFETs. It is categorized under discrete semiconductor products, specifically as a single FET/MOSFET. The device leverages advanced planar technologies to offer improved efficiency compared to standard MOSFETs, targeting industrial and consumer power management systems requiring reliable high-current switching capabilities.
Single FETs, MOSFETs Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence, particularly Rds(on) and Vds ratings, before replacing the original component in existing designs.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
