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The FS100R12PT4BOSA1 is an IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology and Emitter Controlled 4 diodes. It features a PressFIT connection system and includes an integrated NTC thermistor. The module operates with a collector-emitter voltage of 1200 V and a nominal continuous DC collector current of 100 A at 90°C case temperature. It supports a repetitive peak collector current of 200 A and extends the operating junction temperature up to 150°C.
Verify the specific BOSA1 suffix against official documentation to confirm exact manufacturing lot details or regional compliance variations. Confirm the component status as preliminary data may require validation against final production specifications before committing to long-term supply agreements.
Select this module for applications requiring high reliability under thermal stress due to the PressFIT interconnection method. Ensure the cooling system maintains the case temperature within limits to support the 100 A continuous current rating. Verify gate drive requirements align with the specified threshold and internal resistance values.
This component belongs to the EconoPACK™4 series manufactured by Infineon Technologies. It represents the fourth generation of Trench/Fieldstop IGBT technology, designed to balance low conduction losses with efficient switching characteristics in industrial power electronics environments.
FS100R12KT4G_B11