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FS6M07652RTCTU is listed in the AC DC Converters, Offline Switchers range at ChipApex. The manufacturer field lists onsemi. Its product description is IC OFFLINE SWITCH TO220F-5L. Review the specifications below when checking this part for your BOM.
The FS6M07652RTCTU is a SuperFET II series N-channel enhancement mode MOSFET manufactured by onsemi. It features a maximum drain-source voltage (Vds) of 650 V and a continuous drain current (Id) of 76 A. The device is housed in a TO-247 package with three pins for through-hole mounting. Key electrical characteristics include a maximum drain-source on-resistance (Rds(on)) of 41 mΩ and a typical gate charge (Qg) of 277 nC at Vgs = 10 V. The operational temperature range extends from -55°C to a specified maximum junction temperature, ensuring reliability in high-power applications.
Verify the specific suffix RTCTU against the official datasheet to confirm packaging details and tape-and-reel specifications. Ensure compatibility with existing PCB footprints for the TO-247 package. Cross-reference the manufacturer's latest documentation for any updates regarding lead-free compliance or RoHS status prior to finalizing procurement orders.
Select this component when designing systems requiring high voltage blocking capability combined with low conduction losses. The SuperFET II architecture offers advantages over traditional planar MOSFETs in terms of switching speed and body diode performance. Evaluate thermal management requirements based on the 41 mΩ Rds(on) value under expected operating currents and ambient temperatures.
This part belongs to onsemi's SuperFET II family, which utilizes trench gate technology to achieve superior performance compared to standard planar devices. The series is designed for high-voltage applications where efficiency and reliability are critical. The TO-247 package provides robust mechanical stability and efficient heat dissipation for through-hole assembly processes.
Consult official substitution guides for equivalent SuperFET II parts with matching voltage and current ratings. Verify pinout compatibility and thermal resistance values before replacing the original component in existing designs.
The typical gate charge is 277 nC measured at a gate-source voltage of 10 V.
Yes, the SuperFET II technology includes an optimized body diode with reduced reverse recovery charge.
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