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The FS75R07U1E4BPSA1 is a SmartPACK1 IGBT module featuring Trench/Fieldstop IGBT4 technology and an Emitter Controlled Diode. It provides a collector-emitter voltage of 650 V, with continuous DC collector currents rated at 75 A (TC=80°C) or 100 A (TC=25°C), and a repetitive peak current of 150 A. The module utilizes PressFIT contact technology and includes an integrated NTC thermistor for thermal monitoring. Key electrical parameters include a maximum total power dissipation of 275 W at TC=25°C, a gate-emitter peak voltage of +/-20 V, and a junction temperature range from -40°C to 150°C.
Verify the component status as discontinued before initiating any procurement activities. Confirm that the specific ordering suffix matches the required technical specifications and package configuration. Ensure compatibility with existing system designs given the end-of-life status. Request updated documentation or alternative part numbers if long-term supply continuity is required for production planning.
Select this module for applications requiring 650 V blocking capability and high short-circuit robustness. Consider the 75 A continuous current rating at elevated case temperatures when designing thermal management solutions. Verify that the circuit design accommodates the specified switching losses and stray inductance values. Ensure the mounting torque adheres to the manufacturer's guidelines for the M6 screws to maintain proper mechanical stability.
This component belongs to Infineon's SmartPACK1 series, designed for compact power conversion applications. It integrates Trench/Fieldstop IGBT4 technology with an Emitter Controlled Diode to optimize switching performance. The module features PressFIT technology and an integrated NTC thermistor for enhanced reliability and thermal management in industrial power electronics.
Public confirmed substitute part numbers are not available in the provided datasheet.