FT93C66A-ITR-T

Overview

The FT93C66A-ITR-T is a non-volatile EEPROM memory IC manufactured by Fremont Micro Devices Ltd. It provides a storage capacity of 4Kb, organized as 512 x 8 or 256 x 16 bits. The device utilizes a 3-wire serial interface and supports a clock frequency of up to 2 MHz. It operates within a supply voltage range of 1.8V to 5.5V and functions at temperatures from -40°C to +85°C. The component is housed in an 8-TSSOP surface-mount package.

Feature Summary

• Supports dual memory organization for byte (x8) or word (x16) configurations
• Compatible with industry standard MICROWIRE bus protocol
• Includes READY/BUSY signal output during programming cycles

Applications

• Industrial control systems requiring parameter storage
• Automotive electronics compliant with AEC-Q100 standards
• Consumer devices needing compact non-volatile data retention

Procurement Notes

Verify the specific suffix 'ITR-T' against official Fremont Micro Devices documentation to confirm tape-and-reel packaging and temperature grade. Ensure compatibility with existing PCB footprints for the 8-TSSOP package. Cross-reference electrical specifications with system requirements before procurement.

Selection Notes

Select this component when a 4Kb EEPROM with a 3-wire interface is required. It is suitable for applications needing operation across a wide voltage range of 1.8V to 5.5V. Consider the 8-TSSOP package size for space-constrained designs. Verify that the 2 MHz clock speed meets system timing constraints.

Part Context

This part belongs to the 93C66A family of serial EEPROMs. These devices are designed for high-reliability applications requiring robust data retention. The series typically offers enhanced ESD protection and long write cycle endurance. They serve as direct replacements for legacy Microwire-compatible memory solutions.

Replacement Considerations

Direct substitutes include AT93C66B-XHM-T from Microchip Technology. Other compatible options may include M93C66 variants from STMicroelectronics. Verify pinout and electrical parameters before substitution.