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The FZ1200R12KE3NOSA1 is a single IGBT module from Infineon Technologies, part of the TRENCHSTOP™ IGBT3 - E3 series. It features a maximum collector-emitter voltage (Vceo) of 1200 V and a continuous collector current (Ic) of 800 A at 25°C. The module utilizes silicon technology with a screw mount installation style in an EconoPACK+ package. Key electrical parameters include a typical collector-emitter saturation voltage of 1.7 V and a power dissipation rating of 3.6 kW. The operating temperature range spans from -40°C to +125°C.
Verify component authenticity through authorized distributors or direct manufacturer channels due to potential counterfeit risks. Confirm specific ordering suffixes match exact technical requirements. Check current lifecycle status as components may be subject to obsolescence notices. Ensure proper handling procedures are followed during storage and installation to maintain device integrity.
Select this module for applications requiring high current capacity and robust thermal performance. Compare saturation voltage and power dissipation ratings against system thermal constraints. Verify compatibility with existing gate drive circuits regarding voltage levels. Consider mechanical mounting requirements associated with the EconoPACK+ form factor.
This component belongs to Infineon's TRENCHSTOP™ IGBT3 - E3 product family, which offers enhanced efficiency compared to previous generations. The EconoPACK+ series provides standardized dimensions for easy integration into various power electronic designs. This specific single configuration is distinct from half-bridge or six-pack variants within the same voltage class.
Direct substitutes should be sought within the same TRENCHSTOP™ IGBT3 - E3 series with matching voltage and current ratings. Verify pinout compatibility and thermal characteristics before substitution. Consult official replacement lists for end-of-life notifications.