FZ1800R17HE4B9HOSA2

FZ1800R17HE4B9HOSA2

$778.11
  • Description:IGBT MODULE 1700V 1800A
  • Series:IHM-B

SKU:c0330ba2381a Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT MODULE 1700V 1800A
  • Series:IHM-B
  • Mfr:Infineon Technologies
  • Package:Bulk,Tray
  • IGBT Type:-
  • Configuration:Single Switch
  • Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 1800A
  • Input:Standard
  • NTC Thermistor:No
  • Operating Temperature:-40°C ~ 150°C
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:Module
  • Voltage - Collector Emitter Breakdown (Max):1700 V
  • Current - Collector (Ic) (Max):1800 A
  • Power - Max:11500 W
  • Current - Collector Cutoff (Max):5 mA
  • Input Capacitance (Cies) @ Vce:145 nF @ 25 V

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FZ1800R17HE4B9HOSA2

Overview

The FZ1800R17HE4_B9 is a single-switch IGBT module from Infineon's IHM-B series, utilizing IGBT4-E4 technology. It features a collector-emitter voltage (VCES) of 1700 V and a nominal continuous DC collector current (IC nom) of 1800 A at TC = 100°C. The typical VCEsat is 1.95 V at Tvj = 25°C. The integrated diode has a repetitive peak reverse voltage (VRRM) of 1700 V and a forward current (IF) of 1800 A. The module operates within a junction temperature range of -40°C to +150°C, with a total power dissipation of 11.5 kW.

Feature Summary

  • High short-circuit capability with a maximum short-circuit current of 7500 A for up to 10 µs.
  • Robust mechanical construction featuring a copper base plate and high creepage/clearance distances.
  • Extended operating temperature range supporting junction temperatures up to 150°C.
  • Low switching losses combined with low saturation voltage for efficient power conversion.

Applications

  • High-power converters
  • Motor drives
  • Traction systems

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and qualification level. Ensure that the component matches the required industrial or traction grade specifications. Cross-reference the material number and serial codes on the module label with the datasheet to validate authenticity and traceability before integration into production.

Selection Notes

Select this module for applications requiring high current density and robust insulation properties. Consider the thermal resistance values when designing the heatsink interface. Verify that the gate drive circuitry can handle the specified internal gate resistance and charge requirements. Ensure the system voltage does not exceed the 1700 V rating under all transient conditions.

Part Context

This component belongs to the Infineon IHM-B (IGBT High-Power Module) family, designed for high reliability in demanding environments. The series supports voltages from 1200 V to 4500 V and currents up to 3600 A. The FZ1800R17HE4_B9 specifically utilizes the IGBT4-E4 generation, offering improved performance over previous trench/field-stop technologies while maintaining compatibility with standard mounting interfaces.

Replacement Considerations

Direct replacements must match the 1700 V / 1800 A rating and IHM-B housing dimensions. Check for equivalent IGBT4 technology modules from the same manufacturer. Verify that any substitute maintains the same isolation voltage and thermal characteristics. Consult official substitution lists for confirmed compatible part numbers.

FZ1800R17HE4B9HOSA2FZ1800R17HE4B9HOSA2
$778.11
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