FZ2400R12HE4PB9HPSA1

Overview

The FZ2400R12HE4PB9HPSA1 is a single-switch IGBT module utilizing Trench/Fieldstop IGBT4 technology and an Emitter Controlled 4 diode. It features a collector-emitter voltage (VCES) of 1200 V and a nominal continuous DC collector current (IC nom) of 2400 A at TH = 90°C. The repetitive peak collector current (ICRM) reaches 4800 A for 1 ms pulses. The collector-emitter saturation voltage (VCE sat) ranges from 1.75 V to 2.45 V depending on junction temperature. The module operates within a junction temperature range of -40°C to 150°C, with a maximum baseplate temperature of 125°C. It includes pre-applied thermal interface material.

Feature Summary

• Pre-applied Thermal Interface Material
• High power density IHM-B housing
• Package with CTI > 400

Applications

• High power converters
• Motor drives

Procurement Notes

Verify the exact ordering suffix against official Infineon documentation before procurement. Confirm that the specific variant matches the required electrical ratings and mechanical dimensions. Ensure compliance with RoHS standards and check for any export control restrictions applicable to the destination region. Validate the authenticity of the component through authorized distribution channels.

Selection Notes

Select this module for high-power inverter applications requiring robust short-circuit capability and low switching losses. Consider the thermal resistance values when designing the heatsink system. Verify gate drive requirements against the specified internal gate resistor and charge parameters. Ensure the operating conditions remain within the defined safe operating area limits.

Part Context

This component belongs to the IHM-B module family from Infineon Technologies. It is designed for industrial traction and general high-power conversion systems. The series utilizes advanced IGBT4 technology combined with fast recovery diodes to optimize efficiency in demanding power electronics environments.

Replacement Considerations

FZ2400R12HE4_B9