G05N06S2

FET, MOSFET Arrays Overview

The G05N06S2 is a dual N-channel enhancement mode power MOSFET utilizing advanced trench technology. It features a maximum drain-source voltage of 60 V and a continuous drain current of 5 A at 25°C. The device offers low on-resistance, with a maximum value of 35 mΩ at VGS = 10V and 40 mΩ at VGS = 4.5V. Total gate charge is typically 26 nC. It operates within a junction temperature range of -55°C to 150°C and has a thermal resistance (junction-to-ambient) of 40.3°C/W.

FET, MOSFET Arrays Feature Summary

• Dual N-channel configuration with identical low-side and high-side switch characteristics.
• Advanced trench technology providing excellent RDS(ON) performance.
• Low gate charge for efficient switching applications.
• 100% avalanche tested for enhanced reliability.

FET, MOSFET Arrays Applications

• Power switches
• DC/DC converters

FET, MOSFET Arrays Procurement Notes

Verify the specific package marking '05NOS' and SOP-8 dual pinout against your schematic requirements. Confirm that the 4000 pcs/tube packaging aligns with your assembly line capabilities. Ensure the component meets RoHS compliance standards required by your target market regulations before finalizing procurement.

FET, MOSFET Arrays Selection Notes

Select this component when designing circuits requiring a compact dual MOSFET solution for 60 V systems. The low gate charge and optimized RDS(ON) make it suitable for improving efficiency in DC/DC converters. Verify that the 5 A continuous current rating and 40.3°C/W thermal resistance are sufficient for your specific thermal management design constraints.

FET, MOSFET Arrays Part Context

This part belongs to Goford Semiconductor's lineup of dual N-channel enhancement mode power MOSFETs. These devices are designed to replace discrete single MOSFET pairs in space-constrained designs, offering simplified layout and matched electrical characteristics for both high-side and low-side switching roles.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FET, MOSFET Arrays FAQ

What is the maximum pulsed drain current for the G05N06S2?

The maximum pulsed drain current (IDM) is 20 A, limited by the maximum junction temperature.

Is the G05N06S2 RoHS compliant?

Yes, the datasheet explicitly lists RoHS compliance as one of its general features.

What is the typical reverse recovery time (Trr) of the body diode?

The typical reverse recovery time (Trr) is 23 ns, measured at IF = 5A, VGS = 0V, and di/dt = 500A/us.