G65P06K

$1.67

Description：P60V,RD(MAX)<18M@-10V,VTH-2V~-3.
Series：TrenchFET®
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:09a814c09ab9 Category: Single FETs, MOSFETs Brand: Goford Semiconductor

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Product introduction

G65P06K is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Goford Semiconductor. Its product description is P60V,RD(MAX). Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for G65P06K

Description：P60V,RD(MAX)<18M@-10V,VTH-2V~-3.
Series：TrenchFET®
Mfr：Goford Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：18mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：75 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6557 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：125W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TO-252
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for G65P06K

G65P06K

Single FETs, MOSFETs Overview

The G65P06K is a P-Channel Enhancement Mode Power MOSFET manufactured by Goford Semiconductor. It utilizes advanced trench technology to achieve low gate charge and excellent on-resistance. The device features a drain-source voltage of -60V and a continuous drain current of -65A at VGS = -10V. The maximum on-resistance is less than 18mΩ under the same conditions. It is housed in a TO-252 package with a junction-to-case thermal resistance of 1°C/W. The component supports an operating junction temperature range from -55°C to 150°C.

Single FETs, MOSFETs Feature Summary

Advanced trench technology for low gate charge and high performance
100% avalanche tested for reliability
RoHS compliant construction

Single FETs, MOSFETs Applications

Power switches
DC/DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific datasheet version and ordering information directly with Goford Semiconductor or authorized distributors before procurement. Confirm that the TO-252 packaging format aligns with your assembly requirements. Ensure all electrical parameters meet the design specifications for the intended application environment.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a P-Channel MOSFET with a -60V rating and up to -65A continuous current capability. Consider the thermal resistance values when designing heat dissipation solutions. Verify compatibility with driving voltages, specifically the -10V gate drive condition for optimal on-resistance performance.

Single FETs, MOSFETs Part Context

This part belongs to the Goford Semiconductor power MOSFET portfolio, which includes various N-Channel and P-Channel devices utilizing trench technology. These components are designed for general-purpose switching applications in power supplies and motor drives. The TO-252 package provides a balance between current handling capacity and surface-mount convenience.