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GA040TH65
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Product Detailed Parameters
- Description：MOD THYRSTR SIC SGL 6500V SOT227
- Series：-
- Mfr：GeneSiC Semiconductor
- Package：Bulk
- Structure：Single
- Number of SCRs, Diodes：1 SCR
- Voltage - Off State：6.5 kV
- Current - On State (It (AV)) (Max)：40 A
- Current - On State (It (RMS)) (Max)：69 A
- Current - Non Rep. Surge 50, 60Hz (Itsm)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：SOT-227-2
- Voltage - Gate Trigger (Vgt) (Max)：-
- Current - Gate Trigger (Igt) (Max)：30 mA
- Current - Hold (Ih) (Max)：780 mA
- Grade：-
- Qualification：-
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Overview
The GA040TH65 is a Silicon Carbide NPNP thyristor rated for 6500 V repetitive peak forward voltage and 40 A maximum average on-state current. It features an asymmetric design with a 50 V reverse voltage capability. The device operates within a junction temperature range of -55 to 150 °C and utilizes a SOT-227 (ISOTOP) package. Key electrical characteristics include a typical maximum peak on-state voltage of 3.90 V at 40 A, a gate trigger current of 30 mA, and a circuit commutated turn-off time of 4.7 µs. The thermal resistance from junction to case is specified at 0.21 °C/W.
Feature Summary
- Robust compact fully soldered package
- Fast turn on characteristics
- Lowest in class Qrr/IT(AVM)
- SOT-227 (ISOTOP) base plate form factor
Applications
- Grid Tied Solar Inverters
- Wind Power Inverters
- HVDC Power Conversion
- Utility Scale Power Conversion
- Trigger Circuits/Ignition Circuits
Procurement Notes
Verify the specific revision status of the datasheet, as this component was released as a preliminary document in November 2010. Confirm that the manufacturer's disclaimer regarding life-saving or critical systems applications aligns with your project requirements. Ensure mounting torque specifications are strictly followed during installation to maintain thermal performance and mechanical integrity.
Selection Notes
Select this component for high-voltage DC applications requiring robust switching capabilities. The low reverse recovery charge makes it suitable for efficient power conversion systems. Consider the 150 °C operating temperature limit when designing thermal management solutions. Verify that the gate trigger current requirements match your driver circuit capabilities.
Part Context
This part belongs to GeneSiC Semiconductor's silicon carbide thyristor lineup, designed for high-power industrial applications. The GA040TH65 specifically targets grid-tied renewable energy inverters and HVDC systems where high blocking voltage and fast switching are critical. It represents an early generation release in their SiC product portfolio.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate alternatives based on matching 6500 V rating, 40 A current capacity, and SOT-227 package compatibility.
