GA080TH65-227SP

$2,550.00

Description：MOD THYRISTOR CUSTOM SOT227
Series：-

SKU:014f7b41c7d9 Category: SCRs - Modules Brand: GeneSiC Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOD THYRISTOR CUSTOM SOT227
Series：-
Mfr：GeneSiC Semiconductor
Package：Bulk
Structure：Single
Number of SCRs, Diodes：1 SCR
Voltage - Off State：6.5 kV
Current - On State (It (AV)) (Max)：80 A
Current - On State (It (RMS)) (Max)：139 A
Current - Non Rep. Surge 50, 60Hz (Itsm)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Voltage - Gate Trigger (Vgt) (Max)：-
Current - Gate Trigger (Igt) (Max)：100 mA
Current - Hold (Ih) (Max)：-
Grade：-
Qualification：-

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GA080TH65-227SP

Overview

The GA080TH65 is a Silicon Carbide (SiC) NPNP thyristor rated for a repetitive peak forward voltage of 6500 V and a maximum average on-state current of 80 A. It features an RMS on-state current of 139 A at 125 °C case temperature and a non-repetitive peak on-state current capability. The device operates within a junction and storage temperature range of -55 to 150 °C, with a power dissipation rating of 1563 W. Electrical characteristics include a gate trigger current of 100 mA, a typical maximum peak on-state voltage of 3.70 V, and a reverse recovery charge of 4.2 µC. The component utilizes a SOT-227 (ISOTOP) base plate form factor.

Feature Summary

Robust compact fully soldered package
Fast turn on characteristics
Lowest in class Qrr/IT(AVM)

Applications

Grid Tied Solar Inverters
Wind Power Inverters
HVDC Power Conversion
Utility Scale Power Conversion
Trigger Circuits/Ignition Circuits

Procurement Notes

Verify the specific revision status of the datasheet prior to procurement, as the provided documentation is marked as a preliminary release from November 2010. Confirm that the SOT-227 mounting torque requirements align with your mechanical assembly specifications. Ensure that the thermal interface surface meets the optically flat requirement specified for the base plate to maintain the rated thermal resistance performance.

Selection Notes

Select this component for high-voltage applications requiring robust blocking capabilities up to 6500 V. Consider the 150 °C operating temperature limit when designing thermal management systems. Evaluate the 4.2 µC reverse recovery charge against system commutation requirements. Verify that the gate drive circuit can supply the necessary 100 mA trigger current for reliable turn-on under varying temperature conditions.

Part Context

This part belongs to the GeneSiC Semiconductor silicon carbide thyristor family, designed for high-power industrial applications. It represents a discrete solution utilizing SiC technology to handle extreme voltages and temperatures compared to traditional silicon devices. The ISOTOP packaging facilitates efficient heat transfer to heatsinks in large-scale power conversion systems.