GA080TH65

SCRs - Modules Overview

The GA080TH65 is a Silicon Carbide (SiC) NPNP thyristor rated for a repetitive peak forward voltage of 6500 V and a maximum average on-state current of 80 A. It features an RMS on-state current capability of 139 A at a case temperature of 125 °C, with a non-repetitive peak on-state current of 1563 W power dissipation. The device operates within a junction and storage temperature range of -55 to 150 °C. Electrical characteristics include a gate trigger current of -100 mA, a typical leakage current of 15 µA, and a circuit commutated turn-off time of 10.1 µs. The package utilizes the SOT-227 (ISOTOP) base plate form factor.

SCRs - Modules Feature Summary

• Robust compact fully soldered package
• Fast turn on characteristics
• Lowest in class Qrr/IT(AVM)
• SOT-227 (ISOTOP) base plate form factor

SCRs - Modules Applications

• Grid Tied Solar Inverters
• Wind Power Inverters
• HVDC Power Conversion
• Utility Scale Power Conversion
• Trigger Circuits/Ignition Circuits

SCRs - Modules Procurement Notes

Verify component authenticity by cross-referencing the manufacturer marking with the official GeneSiC Semiconductor datasheet specifications. Confirm that the physical package matches the SOT-227 (ISOTOP) form factor and check for any specific handling requirements related to the high-voltage rating. Ensure the supplier provides traceability documentation consistent with the preliminary datasheet revision history dated November 2010.

SCRs - Modules Selection Notes

Select this component when designing systems requiring high blocking voltages up to 6500 V and robust thermal performance up to 150 °C. Consider the low reverse recovery charge and fast turn-on characteristics for applications demanding high efficiency and minimal switching losses. Verify that the mounting torque specifications are met to ensure optimal thermal contact and mechanical stability in high-power environments.

SCRs - Modules Part Context

This part belongs to the GeneSiC Semiconductor silicon carbide thyristor family, designed for high-voltage industrial applications. It represents a specialized asymmetric SiC NPNP thyristor technology aimed at replacing traditional silicon devices in grid-tied solar inverters and HVDC power conversion systems where superior thermal and electrical performance is critical.

SCRs - Modules Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Evaluate alternative high-voltage SiC thyristors from other manufacturers based on matching voltage ratings, current capabilities, and package dimensions.

SCRs - Modules FAQ

What is the maximum operating temperature for the GA080TH65?

The maximum operating and storage temperature for the GA080TH65 is 150 °C.

What type of package does the GA080TH65 use?

The GA080TH65 uses a robust compact fully soldered SOT-227 (ISOTOP) base plate form factor package.

What is the gate trigger current specification?

The gate trigger current (IGT) is specified as -100 mA at a junction temperature of 25 °C with a pulse duration of 10 µs.