GA080TH65

$1,912.50

Description：MOD THYRSTR SIC SGL 6500V SOT227
Series：-

SKU:934f88c6012d Category: SCRs - Modules Brand: GeneSiC Semiconductor

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Product introduction

Product Detailed Parameters

Description：MOD THYRSTR SIC SGL 6500V SOT227
Series：-
Mfr：GeneSiC Semiconductor
Package：Bulk
Structure：Single
Number of SCRs, Diodes：1 SCR
Voltage - Off State：6.5 kV
Current - On State (It (AV)) (Max)：80 A
Current - On State (It (RMS)) (Max)：139 A
Current - Non Rep. Surge 50, 60Hz (Itsm)：-
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Chassis Mount
Package / Case：SOT-227-2
Voltage - Gate Trigger (Vgt) (Max)：-
Current - Gate Trigger (Igt) (Max)：100 mA
Current - Hold (Ih) (Max)：-
Grade：-
Qualification：-

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GA080TH65

Overview

The GA080TH65 is a Silicon Carbide (SiC) NPNP thyristor rated for a repetitive peak forward voltage of 6500 V and a maximum average on-state current of 80 A. It features an RMS on-state current capability of 139 A at a case temperature of 125 °C, with a non-repetitive peak on-state current of 1563 W power dissipation. The device operates within a junction and storage temperature range of -55 to 150 °C. Electrical characteristics include a gate trigger current of -100 mA, a typical leakage current of 15 µA, and a circuit commutated turn-off time of 10.1 µs. The package utilizes the SOT-227 (ISOTOP) base plate form factor.

Feature Summary

Robust compact fully soldered package
Fast turn on characteristics
Lowest in class Qrr/IT(AVM)
SOT-227 (ISOTOP) base plate form factor

Applications

Grid Tied Solar Inverters
Wind Power Inverters
HVDC Power Conversion
Utility Scale Power Conversion
Trigger Circuits/Ignition Circuits

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer marking with the official GeneSiC Semiconductor datasheet specifications. Confirm that the physical package matches the SOT-227 (ISOTOP) form factor and check for any specific handling requirements related to the high-voltage rating. Ensure the supplier provides traceability documentation consistent with the preliminary datasheet revision history dated November 2010.

Selection Notes

Select this component when designing systems requiring high blocking voltages up to 6500 V and robust thermal performance up to 150 °C. Consider the low reverse recovery charge and fast turn-on characteristics for applications demanding high efficiency and minimal switching losses. Verify that the mounting torque specifications are met to ensure optimal thermal contact and mechanical stability in high-power environments.

Part Context

This part belongs to the GeneSiC Semiconductor silicon carbide thyristor family, designed for high-voltage industrial applications. It represents a specialized asymmetric SiC NPNP thyristor technology aimed at replacing traditional silicon devices in grid-tied solar inverters and HVDC power conversion systems where superior thermal and electrical performance is critical.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Evaluate alternative high-voltage SiC thyristors from other manufacturers based on matching voltage ratings, current capabilities, and package dimensions.