GAN080-650EBEZ

$5.74

Description：650 V, 80 MOHM GALLIUM NITRIDE (
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f35a9614107b Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

GAN080-650EBEZ is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is 650 V, 80 MOHM GALLIUM NITRIDE (. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for GAN080-650EBEZ

Description：650 V, 80 MOHM GALLIUM NITRIDE (
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)：650 V
Current - Continuous Drain (Id) @ 25°C：29A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V
Rds On (Max) @ Id, Vgs：80mOhm @ 8A, 6V
Vgs(th) (Max) @ Id：2.5V @ 30.7mA
Gate Charge (Qg) (Max) @ Vgs：6.2 nC @ 6 V
Vgs (Max)：+7V, -6V
Input Capacitance (Ciss) (Max) @ Vds：225 pF @ 400 V
FET Feature：-
Power Dissipation (Max)：240W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：DFN8080-8
Package / Case：8-VDFN Exposed Pad

Single FETs, MOSFETs datasheet and documents for GAN080-650EBEZ

GAN080-650EBEZ

Single FETs, MOSFETs Overview

The GAN080-650EBE is a general-purpose enhancement-mode Gallium Nitride (GaN) FET rated for 650 V drain-source voltage and 29 A continuous drain current. It features an 80 mΩ typical on-state resistance at 25 °C and dissipates up to 240 W of power. The device operates within a junction temperature range of -55 °C to +150 °C and utilizes a DFN8080-8 surface mount package.

Single FETs, MOSFETs Feature Summary

Enhancement mode normally-off operation
Ultra-high frequency switching capability
Absence of body diode
Low gate charge and low output charge

Single FETs, MOSFETs Applications

High power density and high efficiency power conversion
AC-to-DC converters, including totem pole PFC
DC-to-DC converters
Fast battery charging for mobile devices and USB Type-C chargers
Datacom and telecom AC-to-DC and DC-to-DC converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering code against the manufacturer's official documentation to ensure correct package type and electrical specifications. Confirm that the application environment remains within the absolute maximum ratings defined in the datasheet. Check for any recent updates to the product status or legal disclaimers regarding suitability for life-critical systems before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high-voltage GaN technology with low conduction losses. The absence of a body diode makes it suitable for synchronous rectification applications without reverse recovery issues. Ensure the gate drive circuit supports the specified voltage limits and accounts for the low input capacitance for optimal switching performance.

Single FETs, MOSFETs Part Context

This part belongs to Nexperia's portfolio of power GaN FETs designed for mainstream markets. It complements other medium-voltage options by offering a balance between switching speed and robustness in a compact thermal-enhanced small outline package. It targets applications demanding high efficiency and reduced system size.