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GANE1R8-100QBAZ is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Nexperia USA Inc.. Its product description is GANE1R8-100QBA/SOT8091/VQFN7. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for GANE1R8-100QBAZ
- Description：GANE1R8-100QBA/SOT8091/VQFN7
- Series：*
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Drive Voltage (Max Rds On, Min Rds On)：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-
- Grade：-
- Qualification：-
- Mounting Type：-
- Supplier Device Package：-
- Package / Case：-
Single FETs, MOSFETs datasheet and documents for GANE1R8-100QBAZ
Single FETs, MOSFETs Overview
The Nexperia GANE1R8-100QBAZ is a Gallium Nitride (GaN) Field-Effect Transistor designed for high-efficiency power applications. It features an N-channel configuration with a 100 V drain-source voltage rating and a typical on-resistance of 1.8 mΩ. The device supports a continuous drain current of 100 A at case temperature and dissipates up to 65 W of power. Packaged in a compact 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead (VQFN) format, it enables high power density designs.
Single FETs, MOSFETs Feature Summary
- Utilizes Gallium Nitride technology for ultra-fast switching capabilities
- Delivers low on-resistance for improved conduction efficiency
- High thermal performance within a very-thin-profile surface-mount package
Single FETs, MOSFETs Applications
- Electric vehicle charging infrastructure
- Industrial automation power supplies
- Renewable energy systems
- High-density DC-DC converters
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix 'Z' indicates RoHS3 compliance and packaging details against the official datasheet. Confirm the 12NC code 934667635332 matches your supply chain requirements. Ensure moisture sensitivity level 3 handling protocols are followed during assembly to prevent damage.
Single FETs, MOSFETs Selection Notes
Select this component when designing for high-frequency switching where low gate charge and minimal switching losses are critical. The 100 V rating suits intermediate voltage bus architectures. Evaluate thermal management strategies given the 65 W dissipation capability in the small VQFN footprint to ensure reliable operation under load.
Single FETs, MOSFETs Part Context
This GaN FET belongs to Nexperia's wide-bandgap portfolio, aimed at replacing traditional silicon MOSFETs in power electronics. It addresses the industry demand for smaller form factors and higher efficiency in electrified powertrains and data center infrastructure components.
Single FETs, MOSFETs Replacement Considerations
Direct pin-compatible replacements require verification of on-resistance and voltage ratings. Compare switching characteristics and thermal resistance values against existing silicon alternatives to ensure circuit stability and efficiency targets are met without redesigning the PCB layout.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
