GBJ25D

Overview

The GBJ25D is a single-phase glass passivated silicon bridge rectifier manufactured by GeneSiC Semiconductor. It features a compact Single In-line DIP package designed for high heat-conducting performance and thermal welding capability at 260°C for 10 seconds. The device supports a repetitive peak reverse voltage of 200 V and delivers a maximum average forward rectified current of 25 A. Key electrical characteristics include a maximum forward voltage of 1.05 V at 12.5 A, a maximum reverse current leakage of 5 µA at rated DC blocking voltage, and a maximum forward surge current of 500 A under specified pulse conditions.

Feature Summary

• Single-phase glass passivated silicon construction
• Compact single in-line DIP package with high thermal conductivity
• Epoxy resin material compliant with UL 94V-0 flammability standards

Applications

• AC to DC conversion in resistive loads
• Half-sine wave rectification at 60 Hz
• Power supply circuits requiring high surge current capability

Procurement Notes

Verify the specific part number against official manufacturer documentation to confirm technical specifications and compliance status. Ensure that ordering suffixes are interpreted strictly according to the provided datasheet, as they may indicate variations in voltage ratings or packaging without altering the core component function. Cross-reference all electrical parameters with the source material before integration.

Selection Notes

Select this component for applications requiring a 200 V reverse voltage rating and 25 A continuous current capacity. Consider derating the current by 20% when driving capacitive loads. Evaluate thermal management requirements based on the specified thermal resistance values, utilizing recommended heatsink dimensions if operating near maximum ratings to maintain junction temperature within safe limits.

Part Context

This component belongs to the GBJ series of single-phase bridge rectifiers, which includes variants ranging from 100 V to 400 V reverse voltage. The GBJ25D specifically addresses the 200 V segment of this family, sharing common package dimensions and thermal characteristics with other models like the GBJ25B and GBJ25G while differing in its voltage blocking capabilities.

Replacement Considerations

Compatible substitutes within the same series include the GBJ25B (100 V) and GBJ25G (400 V), provided the circuit voltage requirements align with their respective ratings. Ensure any replacement maintains the 25 A current capacity and compatible DIP package footprint for direct board integration.