GBJ30D

Overview

The GeneSiC Semiconductor GBJ30D is a single-phase glass-passivated silicon bridge rectifier designed for through-hole mounting. It features a GBJ package with a maximum average forward rectified current (IO) of 30 A at an ambient temperature of 25 °C and 15 A at 125 °C. The device offers a repetitive peak reverse voltage (VRRM) of 200 V and a DC blocking voltage of 140 V. Key electrical characteristics include a maximum forward voltage (VF) of 1.05 V at 15 A, a maximum reverse leakage current (IR) of 5 µA at 25 °C, and a maximum non-repetitive peak forward surge current (IFSM) of 350 A under specified pulse conditions.

Feature Summary

• Single in-line DIP package construction utilizing epoxy resin compliant with UL 94V-0 flammability standards.
• Glass passivation provides protection against mechanical stress and ensures stable electrical performance across the operating temperature range.
• High thermal conductivity design facilitates efficient heat dissipation when mounted on appropriate heatsinks.

Applications

• AC to DC conversion in general-purpose power supplies
• Bridge rectification in industrial control systems
• Power factor correction circuits

Procurement Notes

Verify that the specific order matches the GBJ30D suffix to ensure the correct 200 V rating, as the series includes variants with different voltage ratings. Confirm RoHS compliance status and packaging quantity requirements directly with the supplier or distributor prior to purchase. Ensure storage and handling procedures adhere to standard semiconductor guidelines to maintain component integrity.

Selection Notes

Select the GBJ30D when a 200 V peak reverse voltage rating is required for single-phase bridge rectification applications. Consider the 30 A continuous current capability at low ambient temperatures and verify thermal management needs based on the specified thermal resistance values. Ensure the application operates within the -50 °C to +150 °C junction temperature range and accounts for current derating factors if capacitive loads are present.

Part Context

The GBJ30D belongs to the GBJ30B through GBJ30G series of single-phase bridge rectifiers from GeneSiC Semiconductor. This series shares a common physical footprint and thermal profile but varies in voltage ratings from 100 V to 400 V. The GBJ package is characterized by its compact size and high heat-conducting performance, making it suitable for space-constrained designs requiring robust rectification capabilities.

Replacement Considerations

Cross-reference with other manufacturers offering GBJ package bridge rectifiers rated for 200 V and 30 A. Verify pinout compatibility and thermal resistance specifications to ensure equivalent performance in existing PCB layouts and cooling solutions.