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The GBJ30K is a single-phase glass-passivated silicon bridge rectifier manufactured by GeneSiC Semiconductor. It belongs to the GBJ series, designed for high current and voltage applications within a compact DIP package. The device features a maximum average forward rectified current of 30 A at a case temperature of 98 °C and supports repetitive peak reverse voltages up to 1000 V. Key electrical parameters include a maximum forward voltage of 1.05 V at 15 A and a maximum reverse leakage current of 5 μA at 25 °C. It operates within a junction temperature range of -50 °C to +150 °C and withstands a maximum forward surge current of 420 A.
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm RoHS compliance status and specific lot traceability upon receipt. Ensure storage conditions maintain the integrity of the glass-passivated junction and epoxy encapsulation prior to assembly.
Select this component when a 30 A continuous current rating and 1000 V blocking voltage are required in a standard DIP footprint. Consider thermal resistance values based on heatsink usage; without a heatsink, the current rating drops to 22 A. Derate current by 20% if used with capacitive loads to prevent excessive stress.
This part is part of the GBJ30J through GBJ30M series, differentiated primarily by their repetitive peak reverse voltage ratings ranging from 600 V to 1000 V. The GBJ30K specifically denotes the 1000 V variant within this family of single-phase bridge rectifiers.
Direct substitutes within the same series include GBJ30J (600 V) and GBJ30M (1000 V), provided the voltage requirements align. Cross-brand replacements must match the 30 A current rating, 1000 V reverse voltage, and GBJ package dimensions.