SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The GBJ35D is a single-phase glass-passivated silicon bridge rectifier from the GBJ series, manufactured by GeneSiC Semiconductor. It features a maximum average forward rectified current (IO) of 35 A and a repetitive peak reverse voltage (VRRM) of 200 V. The device has a maximum forward voltage (VF) of 1.05 V at 17.5 A and a maximum non-repetitive peak forward surge current (IFSM) of 500 A. Operating temperature ranges from -50 °C to +150 °C. The component utilizes a through-hole DIP package with solder pin termination.
Verify the specific part number against official manufacturer documentation before procurement. Confirm that the 200 V rating aligns with circuit requirements. Check for RoHS compliance status as indicated in the datasheet. Ensure proper thermal management strategies are defined for the intended operating environment.
Select this component when a 35 A continuous current rating and 200 V blocking voltage are required. Consider the GBJ package dimensions for PCB layout constraints. Evaluate thermal resistance values based on whether a heatsink is utilized. Compare alternative voltages within the GBJ35B-G range if system specifications differ.
The GBJ35D belongs to the GBJ35B through GBJ35G family of bridge rectifiers. These components share identical physical packages and current ratings but vary in their voltage blocking capabilities. The GBJ series is designed for general-purpose applications requiring robust performance in a compact form factor.
Compatible substitutes include other GBJ35 variants such as GBJ35B or GBJ35G, provided the voltage rating meets the application needs. Verify pinout compatibility and thermal characteristics when cross-referencing with other manufacturers' equivalent bridge rectifier packages.