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The GBJ35G is a single-phase glass-passivated silicon bridge rectifier from the GBJ series, manufactured by GeneSiC Semiconductor. It features a repetitive peak reverse voltage (VRRM) of 400 V and a maximum average forward rectified current (IO) of 35 A at an ambient temperature of 25 °C. The device exhibits a maximum forward voltage drop (VF) of 1.05 V at 17.5 A and a maximum non-repetitive peak forward surge current (IFSM) of 500 A. Operating within a junction temperature range of -50 °C to +150 °C, it utilizes a compact in-line DIP package compliant with UL 94V-0 flammability standards.
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm RoHS compliance status and check for specific manufacturing date codes relevant to your project timeline. Ensure proper handling procedures are followed during assembly to maintain electrical integrity.
Select this component when a 400 V blocking voltage and 35 A continuous current rating are required. Consider the GBJ package dimensions for PCB layout constraints. Evaluate thermal management requirements based on the specified thermal resistance values under heatsink and non-heatsink conditions.
The GBJ35G belongs to the GBJ series of bridge rectifiers, which includes variants such as GBJ35B and GBJ35D. These components share similar physical packaging and general electrical characteristics but differ primarily in their voltage ratings. The series is designed for efficient space-saving implementations in power electronics.
Cross-reference with other GBJ35G equivalents from different manufacturers ensuring identical 400 V VRRM and 35 A IO ratings. Verify pinout compatibility and thermal performance metrics before substitution.