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The GeneSiC Semiconductor GBJ6B is a single-phase glass-passivated silicon bridge rectifier designed for general-purpose power supply applications. It features a compact GBJ DIP package with an average forward rectified current (IO) of 6 A and a repetitive peak reverse voltage (VRRM) of 100 V. The device exhibits a maximum forward voltage drop of 1.05 V at 3 A and supports a maximum forward surge current of 500 A under specified pulse conditions. Operating junction temperatures range from -50 °C to +150 °C, with thermal resistance values of 26 °C/W without a heatsink and 3.4 °C/W with a recommended heatsink.
Verify the specific part marking against the datasheet terminal configuration to ensure correct polarity orientation during assembly. Confirm compliance requirements such as RoHS status and UL flammability ratings match project specifications before finalizing procurement orders.
Select the GBJ6B when a 100 V reverse voltage rating and 6 A continuous current are required in a compact through-hole package. Ensure adequate PCB copper area or a recommended heatsink is used to maintain junction temperature within limits, particularly if operating near maximum current ratings.
The GBJ6B belongs to the GBJ series of single-phase bridge rectifiers manufactured by GeneSiC Semiconductor. This series includes variants with different voltage ratings (GBJ6G through GBJ6D) sharing the same physical footprint and current handling capabilities, allowing for design flexibility across different voltage requirements.
Compatible substitutes include other GBJ6B equivalents from different manufacturers offering identical 6 A / 100 V specifications in the GBJ package. Verify pinout compatibility and thermal resistance characteristics before substitution.