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The GBPC1210-E4/51 is a glass-passivated single-phase bridge rectifier from Vishay General Semiconductor. It provides a maximum average forward rectified output current of 12 A and a peak repetitive reverse voltage of 1000 V. The device features a peak forward surge current capability of 200 A and a typical junction capacitance of 160 pF per diode. Operating within a temperature range of -55 °C to +150 °C, it utilizes the GBPC package with universal mounting terminals.
Verify the specific part number against official Vishay documentation to confirm compliance with RoHS directives and UL recognition file E54214. Ensure that the procurement channel sources components directly from authorized distributors to guarantee authenticity and traceability. Cross-reference the datasheet revision date to validate that all technical parameters match the required specifications for the intended application.
Select this component when a 1000 V blocking voltage and 12 A continuous current rating are required for single-phase rectification. Evaluate the thermal resistance of 1.9 °C/W to determine if adequate heatsinking is necessary for the expected ambient temperature. Confirm that the operating environment remains within the specified -55 °C to +150 °C junction temperature range to maintain performance integrity.
This model belongs to the GBPC12 series, which shares the same physical GBPC package dimensions as the GBPC15, GBPC25, and GBPC35 families. While the mechanical footprint is identical across these variants, they differ in current ratings and voltage capabilities. This specific part represents the 12 A / 1000 V configuration within the broader product line.
Direct replacements must match the 12 A current rating, 1000 V reverse voltage, and GBPC package form factor. Verify that alternative manufacturers offer equivalent thermal resistance and surge current capabilities to ensure circuit compatibility without redesigning the mounting or cooling infrastructure.
The maximum non-repetitive peak forward surge current (IFSM) is 200 A for a single sine-wave superimposed on rated load.
Polarity is marked on the case, with the positive lead identified by a beveled corner.
The typical junction capacitance per diode is 160 pF at 4 V and 1 MHz.