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The GBPC2501M is a single-phase standard bridge rectifier manufactured by Taiwan Semiconductor Corporation. It features an average forward current (IF) of 25 A and a repetitive peak reverse voltage (VRRM) of 100 V. The device utilizes glass passivated chip junctions and incorporates an integrally molded heatsink for efficient thermal management, achieving a typical junction-to-case thermal resistance of 1.5 °C/W. Electrical specifications include a maximum forward voltage of 1.1 V at 12.5 A and a reverse leakage current of 5 µA at rated voltage. It supports a peak forward surge current of 300 A and operates within a junction temperature range of -55°C to +150°C.
Verify the specific package variant during procurement. The suffix 'M' indicates the GBPC-M package configuration where the terminal cathode is parallel to the anode. Confirm compliance with RoHS directives and REACH regulations as stated in the manufacturer documentation before finalizing orders.
Select this component based on the required 25 A current rating and 100 V reverse voltage. Ensure the application environment stays within the specified -55°C to +150°C operating temperature range. Consider the GBPC-M package dimensions and mounting requirements if space constraints or specific terminal orientations are necessary for the design.
This part belongs to the GBPC15, 25, 35 Series from Taiwan Semiconductor. The series offers various current ratings (15A, 25A, 35A) and voltage options ranging from 50V to 1000V. The GBPC2501M specifically addresses applications requiring 25 A capacity with a 100 V blocking voltage in a robust bridge rectifier form factor.
Compatible alternatives within the same series include GBPC2501 and GBPC2501W. Note that these variants differ in package structure; GBPC2501 uses the standard GBPC case, while GBPC2501W utilizes the wire structure GBPC-W package. Verify mechanical fit and terminal orientation when substituting.