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The GeneSiC Semiconductor GBPC2501T is a single-phase glass-passivated silicon bridge rectifier designed for high-temperature applications. It features an integrally molded heatsink within the GBPC-T package to ensure efficient thermal dissipation. The device supports a maximum average forward rectified current of 25.0 A and withstands a repetitive peak reverse voltage of 100 V. Key electrical parameters include a peak forward surge current capability of 300 A, a typical junction-to-case thermal resistance of 1.9 °C/W, and a maximum instantaneous forward voltage drop of 1.1 V per leg at 12.5 A. The unit operates reliably across a temperature range from -55 °C to +150 °C.
Verify that the specific ordering suffix matches the required terminal type, as the datasheet distinguishes between the GBPC-T package with faston lugs and the GBPC-W package with copper leads. Confirm the manufacturer designation aligns with the provided source documentation, noting potential branding variations in the component supply chain. Ensure compliance with RoHS directives if applicable to the target assembly environment.
Select this component when a 25 A continuous current rating and 100 V blocking voltage are required in a compact form factor. The low thermal resistance of 1.9 °C/W makes it suitable for applications where space constraints prevent the use of large external heatsinks. Consider the universal terminal options if the design requires flexibility in connection methods, such as combining PCB mounting with quick-connect terminals.
This component belongs to the GBPC25 series of single-phase bridge rectifiers, which share common mechanical dimensions and thermal characteristics while varying in voltage ratings. The GBPC2501T specifically addresses the 100 V requirement within this lineup, complementing variants rated for 50 V, 200 V, and higher voltages. All members utilize the same glass-passivated silicon technology and integrally molded case structure.
Direct replacements must match the 25 A current rating, 100 V reverse voltage, and GBPC package footprint. Verify that substitute components offer equivalent thermal resistance and terminal configurations to maintain existing mounting torque specifications and thermal management strategies.
The maximum operating junction temperature (Tj) is 150 °C.
The integrally molded heat sink provides a typical junction-to-case thermal resistance (RθJC) of 1.9 °C/W, facilitating efficient heat transfer from the silicon die to the mounting surface.
The device features universal 3-way terminals that support snap-on connections, wire-around wiring, or direct printed circuit board mounting.