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The Vishay GBPC2508-E4/51 is a glass-passivated single-phase bridge rectifier from the GBPC25 series. It provides a maximum repetitive peak reverse voltage (VRRM) of 800 V and supports a maximum average forward rectified output current (IF(AV)) of 25 A. The device features a peak forward surge current capability (IFSM) of 300 A for non-repetitive sine-wave pulses exceeding 1 ms. Electrical characteristics include a typical instantaneous forward voltage drop (VF) of 1.1 V at rated current and a maximum reverse DC current (IR) of 5 μA at 25 °C. The component operates within a junction temperature range of -55 °C to +150 °C and utilizes a GBPC package with universal terminal mounting options.
Verify that the ordering suffix matches the required lead type configuration. The base part number indicates RoHS compliance and commercial grade construction. Confirm the specific package variant aligns with the intended board layout or terminal connection method before finalizing procurement orders.
Select this component when an 800 V blocking voltage and 25 A continuous current rating are required. Ensure the thermal management design accommodates the specified thermal resistance values. Verify that the operating environment remains within the -55 °C to +150 °C junction temperature limits for reliable performance.
This part belongs to the Vishay GBPC25 series of single-phase bridge rectifiers. The series includes variants with different voltage ratings ranging from 50 V to 1000 V while maintaining the same 25 A current capacity and GBPC package form factor. The E4 suffix denotes lead-free composition compliant with RoHS directives.
Cross-reference with other GBPC25 series parts such as GBPC2506W-E4/51 or GBPC2510-E4/51 if voltage requirements differ. Ensure any substitute maintains the 25 A current rating and compatible GBPC footprint dimensions.
The maximum repetitive peak reverse voltage (VRRM) is 800 V.
Polarity is marked on the component, with the positive lead identified by a beveled corner.
The typical junction capacitance per diode is 160 pF, measured at 4 V and 1 MHz.