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The GBPC3508-E4/51 is a glass passivated single-phase bridge rectifier from the Vishay GBPC35 series. It features an average forward rectified output current (IF(AV)) of 35 A and a maximum repetitive peak reverse voltage (VRRM) of 800 V. The device provides a peak forward surge current (IFSM) capability of 400 A for non-repetitive sine-wave loads lasting between 1 ms and 8.3 ms. Electrical characteristics include a maximum instantaneous forward drop (VF) of 1.1 V at 17.5 A, a typical junction capacitance (CJ) of 160 pF per diode, and a maximum reverse DC current (IR) of 5 μA at rated blocking voltage. Thermal performance is defined by a junction-to-case thermal resistance (RθJC) of 1.4 °C/W. The component operates within a temperature range of -55 °C to +150 °C.
Verify the specific ordering suffix against the manufacturer's documentation to confirm compliance details. The base part number indicates RoHS compliance and commercial grade classification. Confirm package codes and delivery modes match project requirements before finalizing orders.
Select this component when an 800 V rating and 35 A continuous current are required. Ensure the application can accommodate the specified 1.1 V forward voltage drop and 1.4 °C/W thermal resistance. Verify that the mechanical mounting method aligns with the available universal terminal options.
This component belongs to the Vishay GBPC35 series of single-phase bridge rectifiers. The series includes variants with different current ratings (12 A, 15 A, 25 A) and voltage ratings (50 V to 1000 V). All models share the same GBPC physical package dimensions and general electrical characteristics.
Cross-reference with other manufacturers offering GBPC-style packages. Verify that substitute parts meet the 35 A current, 800 V voltage, and 1.1 V forward voltage specifications. Check for identical mounting hole dimensions and terminal configurations.
The maximum RMS isolation voltage from case to leads is 2500 V.
The typical instantaneous forward characteristics show that the forward voltage decreases as the temperature increases from 25 °C to 150 °C.
The typical junction capacitance per diode is 160 pF, measured at 4 V and 1 MHz.