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The GBPC3510 T0G is a single-phase bridge rectifier from the GBPC35 series by Taiwan Semiconductor. It features a 1000 V repetitive peak reverse voltage (VRRM) and supports a maximum average forward current (IF) of 35 A. The device handles a peak forward surge current (IFSM) of 400 A under an 8.3 ms half-sine wave condition. Electrical characteristics include a typical forward voltage (VF) of 1.1 V at 17.5 A and a maximum reverse current (IR) of 5 µA at rated VR. The junction-to-case thermal resistance is typically 1.5 °C/W, with an operating temperature range spanning -55 °C to +150 °C.
Verify the component against the official datasheet version M2211 to confirm specifications. Ensure the package type matches the required terminal configuration, as suffixes like W or M indicate different lead structures. Confirm UL recognition file E-326243 compliance if safety certification is required for the end application.
Select this component when a 35 A continuous current rating and 1000 V blocking voltage are necessary. The 1.5 °C/W thermal resistance makes it suitable for applications requiring effective passive cooling. Verify that the 400 A surge rating aligns with the expected inrush currents in the target circuit design.
This part belongs to the GBPC15, 25, and 35 series of standard bridge rectifiers manufactured by Taiwan Semiconductor. The series offers various voltage ratings from 50 V to 1000 V across different current capacities. The GBPC35 variant specifically targets higher power density requirements within the same standardized mechanical footprint.
Cross-reference with other manufacturers offering GBPC packages rated for 35 A and 1000 V. Ensure equivalent thermal resistance and surge current capabilities are maintained. Verify pinout compatibility and mounting torque specifications before substitution.
The maximum operating junction temperature (TJ MAX) is +150 °C.
Polarity is marked directly on the top surface of the molding compound, identifying the AC input and DC output terminals.
The typical reverse current (IR) is less than 5 µA at 25 °C when measured at the rated repetitive peak reverse voltage.