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The GeneSiC Semiconductor GBPC5002W is a single-phase glass passivated silicon bridge rectifier designed for high-current applications. It features an average forward rectified current (IO) of 50.0 A at a case temperature of 50 °C and supports a repetitive peak reverse voltage (VRRM) of 200 V. The device withstands a peak forward surge current (IFSM) of 400 A under single sine-wave conditions. Electrical characteristics include a maximum instantaneous forward voltage drop of 1.2 V per leg and a typical junction capacitance of 360 pF. The component operates within a junction temperature range of -55 °C to 150 °C and provides 2500 V RMS isolation from the case to the leads.
Verify the specific manufacturer designation as GeneSiC Semiconductor against the datasheet source provided. Confirm that the W suffix corresponds to the GBPC-W package variant detailed in the specifications. Ensure the procurement documentation matches the electrical ratings for the 200 V reverse voltage configuration.
Select this component when a 50 A continuous current rating and 200 V blocking voltage are required. The GBPC-W package offers universal terminal options suitable for various mounting styles. Consider the 1.2 °C/W thermal resistance for heatsink design calculations. Verify compatibility with the 2500 V isolation requirement between the case and leads.
The GBPC5002W belongs to the GBPC-T/W series of single-phase bridge rectifiers manufactured by GeneSiC Semiconductor. This series includes variants with different voltage ratings ranging from 50 V to 400 V, all sharing the same 50 A current capacity and mechanical footprint. The W package variant utilizes specific terminal configurations distinct from the T package version.
Cross-reference with other manufacturers' GBPC5002 equivalents such as those from Taiwan Semiconductor or Comchip Technology. Ensure replacement parts match the 50 A IO, 200 V VRRM, and GBPC-W package dimensions. Verify terminal types and thermal resistance values align with the original design requirements.