SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The GeneSiC Semiconductor GBPC5008W is a single-phase glass-passivated silicon bridge rectifier designed for high-power applications. It features an integrally molded heat sink within the GBPC-W package to ensure efficient thermal dissipation. The device supports a maximum average forward rectified current of 50 A and withstands a repetitive peak reverse voltage of 800 V. It exhibits a typical junction capacitance of 360 pF and a maximum instantaneous forward voltage drop of 1.2 V per leg. The component operates reliably across a temperature range from -55°C to +150°C.
Verify the specific manufacturer designation as GeneSiC Semiconductor or Navitas Semiconductor in official documentation, as supply chain transitions may affect branding. Confirm the GBPC-W package variant matches the required terminal configuration and mounting torque specifications before integration into the design.
Select this component when a 50 A continuous current rating and 800 V blocking voltage are required. Ensure the application utilizes the integrally molded heat sink for thermal management. Verify that the operating environment stays within the specified -55°C to +150°C junction temperature range for optimal performance.
This part belongs to the GBPC5006T/W through GBPC5010T/W series of single-phase bridge rectifiers. The series shares common mechanical and electrical characteristics, differentiated primarily by their peak reverse voltage ratings. The GBPC5008W specifically addresses the 800 V requirement within this lineup.
Compatible substitutes include other GBPC5008 variants from different manufacturers, such as Comchip Technology's GBPC5008W-G, provided they meet the same 50 A current and 800 V voltage specifications.