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The GBU12K is a single-phase silicon diode bridge rectifier manufactured by Diotec Semiconductor, rated for an average forward current of 12 A and a peak reverse voltage of 800 V. It utilizes the GBU-4 through-hole package with solder pin termination. The device supports a junction temperature range from -50°C to +150°C and exhibits a typical forward voltage of 1 V at 12 A. Maximum ratings include a repetitive peak reverse voltage of 800 V, a non-repetitive peak forward surge current of 300 A at 60 Hz, and a maximum reverse leakage current of 5 µA.
Verify component authenticity by cross-referencing the manufacturer's marking code against official datasheet specifications. Confirm that the ordering suffix matches the required voltage rating variant within the GBU12 series. Ensure compliance with RoHS and REACH directives relevant to your target market regulations before finalizing procurement orders.
Select this component when circuit design requires an 800 V blocking voltage combined with a 12 A continuous current capacity. Evaluate the thermal resistance parameters to ensure adequate heat dissipation under maximum load conditions. Consider the recommended protective resistance value necessary to limit surge currents if connecting directly to large capacitive loads.
This part belongs to the GBU12A through GBU12M series of single-phase bridge rectifiers. All variants share identical physical dimensions, current ratings, and thermal characteristics. The distinguishing factor across the series is the peak reverse voltage rating, which increases sequentially from 50 V to 1000 V depending on the specific alphanumeric suffix assigned to the model number.
GBU12J (600 V), GBU12M (1000 V)