GBU12M-T

Overview

The GBU12M-T is a single-phase silicon bridge rectifier manufactured by Diotec Semiconductor, designed for through-hole mounting in the GBU-4 package. It features a maximum average forward rectified current of 12 A and a peak repetitive reverse voltage of 1000 V. The device exhibits a maximum forward voltage drop of 1.1 V at rated current and supports a non-repetitive peak surge current of 300 A. Operating temperatures range from -50°C to +150°C junction temperature, with a typical reverse leakage current of 5 µA.

Feature Summary

• High current handling capability suitable for power supply applications
• Robust surge current tolerance for transient protection
• Plastic case material classified UL 94V-0 for flame retardancy

Applications

• AC-DC converter circuits
• Power supply units
• Battery chargers

Procurement Notes

Verify the specific suffix 'T' against the official Diotec Semiconductor datasheet to confirm packaging details, as standard listings may indicate bulk packaging. Ensure the component matches the GBU12M electrical specifications before integration into designs requiring 1000V isolation.

Selection Notes

Select this component when a 12 A continuous current rating and 1000 V reverse voltage are required in a through-hole GBU package. Compare thermal resistance and forward voltage characteristics against alternative bridge rectifiers to ensure compatibility with the target circuit's efficiency and heat dissipation requirements.

Part Context

This part belongs to the GBU series of silicon bridge rectifiers from Diotec Semiconductor, which includes variants with different voltage ratings such as GBU12A (50V), GBU12B (100V), and GBU12D (200V). The GBU12M specifically provides the highest voltage rating within this common 12 A current family.

Replacement Considerations

Cross-reference with other manufacturers offering GBU-12A or equivalent 12A/1000V bridge rectifiers. Verify pinout compatibility and physical dimensions to ensure mechanical fit without modification.