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The GeneSiC Semiconductor GBU15M is a single-phase glass-passivated silicon bridge rectifier designed for high-current applications. It features a maximum average forward rectified current (IO) of 15 A and a repetitive peak reverse voltage (VRRM) of 1000 V. The device supports a peak forward surge current (IFSM) of 250 A under resistive load conditions. Electrical characteristics include a maximum forward voltage drop (VF) of 1.05 V at 7.5 A and a maximum reverse leakage current (IR) of 5 µA at rated DC blocking voltage. Thermal resistance values are specified as 5.0 °C/W junction-to-case and 22 °C/W junction-to-ambient when mounted on a PCB without a heatsink. The component operates within a temperature range of -40 °C to +150 °C.
Verify the specific part marking and datasheet revision date upon receipt, as manufacturing sources may vary. Confirm that the received components match the GBU15M specifications regarding voltage ratings and package dimensions. Ensure storage conditions remain within the specified temperature limits to maintain material integrity before installation.
Select this component for designs requiring a 15 A continuous current rating with a 1000 V reverse voltage capability. Consider the thermal resistance parameters when designing heat dissipation strategies, particularly if operating near the maximum junction temperature limit. Verify compatibility with the GBU through-hole package footprint during PCB layout.
This component belongs to the GBU series of single-phase bridge rectifiers, which includes variants such as GBU15J and GBU15K offering lower voltage ratings. The GBU15M specifically provides the highest voltage option within this 15 A family, making it suitable for higher voltage AC input applications compared to its lower-rated counterparts.
Direct substitutes include other manufacturers' GBU15M parts or equivalent 15 A / 1000 V bridge rectifiers in the GBU package. Ensure replacement devices meet the same 94V-0 flammability rating and thermal performance specifications.