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The GBU4A-1E3/51 is a single-phase bridge rectifier manufactured by Vishay General Semiconductor - Diodes Division. It utilizes the GBU surface-mount package and features four pins for through-hole mounting compatibility. The device supports a peak repetitive reverse voltage (Vrrm) of 50 V and an average forward rectified current (If) of 4 A. It withstands a peak non-repetitive forward surge current (Ifsm) of 150 A. Key electrical parameters include a maximum forward voltage drop (Vf) of 1 V at rated current, a peak reverse leakage current (Ir) of 500 μA, and an operating junction temperature range from -55°C to +150°C.
Verify the exact part number suffix against official Vishay documentation to confirm pinout orientation and specific testing criteria. Confirm RoHS compliance status and lead-free material declarations with the supplier before procurement. Ensure storage conditions align with manufacturer guidelines to maintain component integrity prior to assembly.
Select this component when a 50 V rating and 4 A continuous current capacity are required in a compact GBU footprint. Evaluate thermal management requirements based on the specified junction temperature limits. Compare alternative packages if board space constraints differ from the standard GBU dimensions provided in the datasheet.
This component belongs to the GBU4A series of single-phase bridge rectifiers. The series is characterized by high current density and low forward voltage drop. It is designed for general-purpose rectification applications where space-saving surface-mount solutions are preferred over traditional through-hole alternatives.
Cross-reference with other Vishay GBU4A variants or equivalent industry-standard bridge rectifiers offering identical 50 V and 4 A ratings. Verify pin compatibility and physical dimensions to ensure direct replacement without PCB redesign.
The maximum operating junction temperature is +150°C.
Yes, the silicon junctions are glass-passivated to protect against inverse voltage surges.
The peak reverse leakage current is specified as 500 μA.